FQI7N60TU - onsemi

N-Channel Power MOSFET, QFET®, 600 V, 7.4 A, 1 Ω, I2PAK

Technical Details

Case/Package TO-262-3
China RoHS Non-Compliant
Continuous Drain Current (ID) 7.4A
Country of Origin Mainland China
Current Rating 7.4A
Drain to Source Breakdown Voltage 600V
Drain to Source Resistance
Drain to Source Voltage (Vdss) 600V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 60ns
Gate to Source Voltage (Vgs) 30V
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Input Capacitance 1.43nF
Introduction Date 2000-06-26
Lead Free Lead Free
Lifecycle Status EOL
Manufacturer Lifecycle Status LAST SHIPMENTS
Max Operating Temperature 150°C
Max Power Dissipation 3.13W
Min Breakdown Voltage 600V
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Terminals 3
Power Dissipation 3.13W
Rds On Max
REACH SVHC No
Rise Time 80ns
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Turn-Off Delay Time 65ns
Turn-On Delay Time 30ns
Voltage Rating (DC) 600V
Weight 2.084g

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

Images

onsemi FQI7N60TU | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   EOL

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
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Infineon Obsolete
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NEC Obsolete
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onsemi Obsolete
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