NJVMJB45H11T4G - onsemi
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Technical Details
| Case/Package | TO-263-3 |
| China RoHS | Non-Compliant |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 50W |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| REACH SVHC | No |
| RoHS | Compliant |
| Transition Frequency | 40MHz |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
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Rochester Electronics
Authorized Distributors
Non-Authorized Distributors
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