SBC856BWT1G - onsemi

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon

Technical Details

Case/Package SC
China RoHS Compliant
Collector Base Voltage (VCBO) 80V
Collector Emitter Breakdown Voltage 65V
Collector Emitter Saturation Voltage 650mV
Collector Emitter Voltage (VCEO) 65V
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) -5V
Frequency 100MHz
Gain Bandwidth Product 100MHz
hFE Min 220
Introduction Date 1999-01-01
Lead Free Lead Free
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Collector Current 100mA
Max Operating Temperature 150°C
Max Power Dissipation 150mW
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Tape and Reel
Polarity PNP
Power Dissipation 150mW
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Transition Frequency 100MHz

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

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onsemi SBC856BWT1G | Farnell

Farnell

Lifecycle Status Indicator

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