PDTA114ET215 - NXP Semiconductors

TRANS PREBIAS PNP 250MW TO236AB

Technical Details

Case/Package TO-236AB
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 150mV
Collector Emitter Voltage (VCEO) 50V
Collector-emitter Voltage-Max 150mV
Emitter Base Voltage (VEBO) -10V
Height 1mm
Lead Free Lead Free
Length 3mm
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 250mW
Mount Surface Mount
Number of Pins 3
Package Quantity 1
Packaging Cut Tape
Polarity PNP
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 180MHz
Voltage 50V
Width 1.4mm

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Images

NXP Semiconductors PDTA114ET215 | Element14

Element14

NXP Semiconductors PDTA114ET215 | Newark

Newark

NXP Semiconductors PDTA114ET215 | Rs

Rs

NXP Semiconductors PDTA114ET215 | Digikey

Digikey

Lifecycle Status Indicator

   Volume Production
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Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
NXP Semiconductors Obsolete
Infineon Obsolete
Infineon End of Life
Infineon Volume Production
Infineon Unknown
Toshiba Unknown
ON Semiconductor Volume Production
ON Semiconductor Volume Production
ON Semiconductor Volume Production
Rohm Volume Production

See more alternatives See less alternatives

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