RFP8P05 - onsemi

Tube Through Hole P-Channel Single Mosfet Transistor 8A Tc 3.1A 2.5W 20ns

Technical Details

Case/Package TO-252-3
Continuous Drain Current (ID) 8A
Current Rating -8A
Drain to Source Breakdown Voltage -50V
Drain to Source Resistance 300mΩ
Drain to Source Voltage (Vdss) 250V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 20ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 420pF
Introduction Date 2000-03-01
Lead Free Contains Lead
Lifecycle Status Obsolete
Max Operating Temperature 175°C
Max Power Dissipation 48W
Min Breakdown Voltage 50V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Terminals 3
Power Dissipation 48W
Rds On Max 2.1Ω
Rise Time 30ns
RoHS Non-Compliant
Turn-Off Delay Time 42ns
Voltage Rating (DC) -50V

Compliance

   RoHS : Unconfirmed

Images

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

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Fairchild Semiconductor Obsolete
onsemi Obsolete
Intersil Obsolete
Samsung Obsolete

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