STB6NK60Z-1 - STMicroelectronics

N-channel 600 V - 1 Ohm - 6 A - I2PAK Zener-Protected SuperMESH(TM) Power MOSFET

Technical Details

Case/Package TO-262-3
China RoHS Non-Compliant
Continuous Drain Current (ID) 6A
Country of Origin Mainland China
Drain to Source Breakdown Voltage 600V
Drain to Source Resistance 1.2Ω
Drain to Source Voltage (Vdss) 600V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 19ns
Gate to Source Voltage (Vgs) 30V
Input Capacitance 905pF
Introduction Date 1980-01-04
Lead Free Lead Free
Lifecycle Status Production
Max Operating Temperature 150°C
Max Power Dissipation 104W
Min Breakdown Voltage 600V
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Power Dissipation 110W
Radiation Hardening No
Rds On Max 1.2Ω
REACH SVHC No
Resistance 1.2Ω
Rise Time 14ns
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Turn-Off Delay Time 47ns
Turn-On Delay Time 14ns

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

STMicroelectronics STB6NK60Z-1 | Future Electronics

Future Electronics

Lifecycle Status Indicator

   Production

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