STD5N20LT4 - STMicroelectronics

MOSFET Transistor, N Channel, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V RoHS Compliant: Yes

Technical Details

Case/Package DPAK
China RoHS Non-Compliant
Continuous Drain Current (ID) 5A
Country of Origin Mainland China
Current Rating 5A
Drain to Source Breakdown Voltage 200V
Drain to Source Resistance 700mΩ
Drain to Source Voltage (Vdss) 200V
Dual Supply Voltage 200V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 15.5ns
Gate to Source Voltage (Vgs) 20V
Height 2.63mm
Input Capacitance 242pF
Introduction Date 2004-09-20
Length 6.6mm
Lifecycle Status Production
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Power Dissipation 33W
Min Breakdown Voltage 200V
Min Operating Temperature -55°C
Mount Surface Mount
Nominal Vgs 2.5V
Number of Channels 1
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Packaging Tape and Reel
Power Dissipation 33W
Radiation Hardening No
Rds On Max 700mΩ
REACH SVHC No
Resistance 700mΩ
Rise Time 21.5ns
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Termination SMD/SMT
Threshold Voltage 2.5V
Turn-Off Delay Time 14ns
Turn-On Delay Time 11.5ns
Voltage Rating (DC) 200V
Width 6.2mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

STMicroelectronics STD5N20LT4 | Future Electronics

Future Electronics

Lifecycle Status Indicator

   Production
Symbol
Footprint

Alternatives (Possible Substitutes)

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