STI13NM60N - STMicroelectronics
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in I2PAK package
Technical Details
| Case/Package | TO-262-3 |
| China RoHS | Non-Compliant |
| Continuous Drain Current (ID) | 11A |
| Country of Origin | Mainland China |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 360mΩ |
| Drain to Source Voltage (Vdss) | 600V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 10.75mm |
| Input Capacitance | 790pF |
| Introduction Date | 2009-02-23 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Lifecycle Status | Production |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 90W |
| Min Breakdown Voltage | 600V |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 360mΩ |
| REACH SVHC | No |
| Resistance | 360MΩ |
| Rise Time | 8ns |
| RoHS | Compliant |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 3ns |
| Width | 4.6mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| onsemi | Obsolete | ||
| Infineon | Obsolete | ||
| STMicroelectronics | Production | ||
| Fairchild Semiconductor | Obsolete | ||
| Infineon | Obsolete | ||
| NEC | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| onsemi | Obsolete | ||
| Fairchild Semiconductor | Obsolete |
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