STP35N65M5 - STMicroelectronics
N-channel 650 V, 0.085 Ohm, 27 A, MDmesh(TM) V Power MOSFET in TO-220
Technical Details
| Case/Package | TO-220 |
| China RoHS | Non-Compliant |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 98mΩ |
| Drain to Source Voltage (Vdss) | 650V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 3.75nF |
| Introduction Date | 2009-01-22 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 160W |
| Min Breakdown Voltage | 650V |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 98mΩ |
| REACH SVHC | No |
| Resistance | 98MΩ |
| Rise Time | 12ns |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 60ns |
| Width | 4.6mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| STMicroelectronics | Production | ||
| Toshiba | Production | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Production | ||
| STMicroelectronics | Production | ||
| onsemi | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| IXYS | Obsolete | ||
| onsemi | Obsolete |
Non-Authorized Distributors
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