STP38N65M5 - STMicroelectronics

N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh m5 Power MOSFET in TO-220 package

Technical Details

Case/Package TO-220
China RoHS Non-Compliant
Continuous Drain Current (ID) 30A
Country of Origin Mainland China
Drain to Source Breakdown Voltage 650V
Drain to Source Resistance 95mΩ
Drain to Source Voltage (Vdss) 650V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 9ns
Gate to Source Voltage (Vgs) 25V
Height 15.75mm
Input Capacitance 3nF
Introduction Date 2012-06-07
Lead Free Lead Free
Length 10.4mm
Lifecycle Status Production
Max Operating Temperature 150°C
Max Power Dissipation 190W
Min Breakdown Voltage 650V
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Power Dissipation 190W
Radiation Hardening No
Rds On Max 95mΩ
REACH SVHC No
Resistance 95MΩ
Rise Time 9ns
RoHS Compliant
Turn-Off Delay Time 66ns
Turn-On Delay Time 66ns
Width 4.6mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

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STMicroelectronics STP38N65M5 | Future Electronics

Future Electronics

Lifecycle Status Indicator

   Production

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