STW8NC90Z - STMicroelectronics

Power Field-Effect Transistor, 7.6A I(D), 900V, 1.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...

Technical Details

Case/Package TO-247
China RoHS Non-Compliant
Continuous Drain Current (ID) 7.6A
Drain to Source Breakdown Voltage 900V
Drain to Source Resistance 1.38Ω
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 45ns
Gate to Source Voltage (Vgs) 25V
Introduction Date 1980-01-04
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 190W
Min Breakdown Voltage 900V
Min Operating Temperature -65°C
Number of Elements 1
Number of Terminals 3
Power Dissipation 190W
REACH SVHC No
Rise Time 12ns
RoHS Compliant

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

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Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

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