STP10NM60N - STMicroelectronics

N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220 package

Technical Details

Case/Package TO-220
China RoHS Non-Compliant
Continuous Drain Current (ID) 8A
Country of Origin Mainland China
Drain to Source Breakdown Voltage 600V
Drain to Source Resistance 550mΩ
Drain to Source Voltage (Vdss) 600V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 15ns
Gate to Source Voltage (Vgs) 25V
Height 15.75mm
Input Capacitance 540pF
Introduction Date 2009-06-10
Lead Free Lead Free
Length 10.4mm
Lifecycle Status Production
Max Operating Temperature 150°C
Max Power Dissipation 70W
Min Breakdown Voltage 600V
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Power Dissipation 70W
Radiation Hardening No
Rds On Max 550mΩ
REACH SVHC No
Resistance 550mΩ
Rise Time 12ns
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
Threshold Voltage 3V
Turn-Off Delay Time 32ns
Turn-On Delay Time 10ns
Width 4.6mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

STMicroelectronics STP10NM60N | RS

RS

Lifecycle Status Indicator

   Production

Alternatives (Possible Substitutes)

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