STP13N95K3 - STMicroelectronics

N-channel 950 V, 0.68 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220

Technical Details

Case/Package TO-220
China RoHS Compliant
Continuous Drain Current (ID) 10A
Drain to Source Breakdown Voltage 950V
Drain to Source Resistance 850mΩ
Drain to Source Voltage (Vdss) 950V
Element Configuration Single
Fall Time 21ns
Gate to Source Voltage (Vgs) 30V
Height 15.75mm
Input Capacitance 1.62nF
Lead Free Lead Free
Length 10.4mm
Lifecycle Status Production
Max Operating Temperature 150°C
Max Power Dissipation 190W
Min Breakdown Voltage 950V
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Power Dissipation 190W
Radiation Hardening No
Rds On Max 850mΩ
REACH SVHC Yes
Resistance 850mΩ
Rise Time 16ns
RoHS Compliant
Threshold Voltage 4V
Turn-Off Delay Time 50ns
Turn-On Delay Time 18ns
Width 4.6mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

STMicroelectronics STP13N95K3 | TME

TME

Lifecycle Status Indicator

   Production

Alternatives (Possible Substitutes)

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