STP90N55F4 - STMicroelectronics

N-channel 55 V, 0.0064 Ohm, 90 A TO-220 Power MOSFET

Technical Details

Case/Package TO-220-3
China RoHS Non-Compliant
Contact Plating Tin
Continuous Drain Current (ID) 90A
Drain to Source Breakdown Voltage 55V
Drain to Source Resistance 8mΩ
Drain to Source Voltage (Vdss) 55V
Element Configuration Single
Fall Time 30ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 4.8nF
Lead Free Lead Free
Lifecycle Status Production
Max Operating Temperature 175°C
Max Power Dissipation 150W
Min Breakdown Voltage 55V
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Terminals 3
Power Dissipation 150W
Radiation Hardening No
Rds On Max 8mΩ
REACH SVHC No
Resistance 8MΩ
Rise Time 60ns
RoHS Compliant
Turn-Off Delay Time 55ns
Turn-On Delay Time 20ns

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

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Lifecycle Status Indicator

   Production

Alternatives (Possible Substitutes)

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