TIP111 - onsemi

Tube Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 1000 @ 1A 4V 2A 2W 80V

Technical Details

Case/Package TO-220AB
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Voltage (VCEO) 80V
Continuous Collector Current 2A
Country of Origin Philippines
Current Rating 2A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
hFE Min 500
Introduction Date 1994-01-01
Lead Free Lead Free
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Breakdown Voltage 80V
Max Collector Current 2A
Max Operating Temperature 150°C
Max Power Dissipation 50W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Bulk
Polarity NPN
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Voltage Rating (DC) 80V

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

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onsemi TIP111 | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Obsolete
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