2N5460-E3 - Vishay
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
Technical Details
| Case/Package | TO-92 |
| Drain to Source Breakdown Voltage | 40V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 40V |
| Introduction Date | 2001-06-13 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 310mW |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Power Dissipation | 350mW |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
Images
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