SI8439DB-T1-E1 - Vishay
Small Signal Field-Effect Transistor, 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Technical Details
| Case/Package | BGA |
| Continuous Drain Current (ID) | -9.2A |
| Drain to Source Breakdown Voltage | -8V |
| Drain to Source Resistance | 25mΩ |
| Drain to Source Voltage (Vdss) | 8V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 210ns |
| Gate to Source Voltage (Vgs) | -800mV |
| Introduction Date | 2012-07-08 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2.7W |
| Min Breakdown Voltage | 8V |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Number of Terminals | 4 |
| Packaging | Tape & Reel (TR) |
| Radiation Hardening | No |
| Rds On Max | 25mΩ |
| REACH SVHC | No |
| Rise Time | 25ns |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -400mV |
| Turn-Off Delay Time | 330ns |
| Turn-On Delay Time | 30ns |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
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