SI8489EDB-T2-E1 - Vishay
SI8489EDB-T2-E1 P-channel MOSFET Transistor; 4.3 A; 20 V; 4-Pin MICRO FOOT
Technical Details
| Case/Package | BGA |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 54mΩ |
| Drain to Source Voltage (Vdss) | 20V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 765pF |
| Introduction Date | 2013-02-15 |
| Lifecycle Status | Production |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 780mW |
| Min Breakdown Voltage | 20V |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Number of Terminals | 4 |
| Packaging | Digi-Reel® |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 44mΩ |
| REACH SVHC | Yes |
| Rise Time | 20ns |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 27ns |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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