SI8497DB-T2-E1 - Vishay
P-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 13A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor...
Technical Details
| Case/Package | BGA |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Resistance | 53mΩ |
| Drain to Source Voltage (Vdss) | 30V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.32nF |
| Introduction Date | 2011-07-28 |
| Lifecycle Status | Production |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 13W |
| Min Breakdown Voltage | 30V |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Radiation Hardening | No |
| Rds On Max | 53mΩ |
| REACH SVHC | Yes |
| Rise Time | 10ns |
| RoHS | Compliant |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 50ns |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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