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All Search (21 - 30 of 19500) for parts

(BJTs)

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Element14 - BFR193E6327HTSA1

For low noise, high-gain amplifiers up to 2 GHzFor linear broadband amplifiersfT = 8 GHz, NFmin = 1 dB at 900 MHzPb-free (RoHS compliant) packageQualification report according to AEC-Q101 available

USD
0.01
Volume Production
Surface Mount SOT 3   Tin, Matte -65°C 150°C 580mW 12V Tape and Reel NPN 80mA 12V 8GHz 12V 580mW - 1 1 20V 8GHz 2V   12V 65mA   8GHz   15dB 1dB 15dB Single                   2.9mm 1mm 1.3mm Yes   No Lead Free Yes Not Halogen Free  

LCSC - MMBT2222ALT1G

Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 225mW Surface Mount SOT-23-3

USD
0.009
Volume Production
  SOT-23-3 3     -55°C 150°C 225mW 40V Tape and Reel NPN 600mA 40V 300MHz 40V 300mW Automotive, AEC-Q101 3000 1 75V 300MHz 6V 100 40V 600mA 1V 300MHz 1V         300MHz         General Purpose       2.9mm 0.94mm 1.3mm Yes   No Lead Free Yes   No

Farnell - BFP405H6327XTSA1

Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:4.5V; Transition Frequency Ft:25Ghz; Power Dissipation Pd:75Mw; Dc Collector Current:25Ma; Rf Transistor Case:sot-343; No. Of Pins:4Pins; Dc Current Gain Hfe:60Hfe Rohs Compliant: Yes

USD
0.01
Volume Production
Surface Mount SOT       -65°C 150°C 75mW 4.5V Tape and Reel NPN 25mA 5V 25GHz 5V 75mW - 3000 1 15V 25GHz 1.5V 60           23dB 1.25dB 23dB       SMD/SMT 1.8GHz             1mm   Yes   No Lead Free Yes Halogen Free No

Future Electronics - BCR10PNH6327XTSA1

BCR10PN Series NPN/PNP 50 V 100 mA Silicon Digital Transistor Array - SOT-363-6

USD
0.11
Not Recommended for New Design
Surface Mount SOT-363-6 6     -65°C 150°C 250mW 300mV Tape and Reel NPN, PNP 100mA 50V 130MHz 50V 250mW - 3000         30     300mV   300mV                 10kR         2mm 0.8mm 1.25mm Yes     Lead Free Yes Halogen Free  

TME - BFR193WH6327XTSA1

Rf Transistor, Npn, 12V, 8Ghz, Sot-323; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:12V; Transition Frequency Ft:8Ghz; Power Dissipation Pd:580Mw; Dc Collector Current:80Ma; Dc Current Gain Hfe:70Hfe; Rf Transistor Rohs Compliant: Yes

USD
0.08
Volume Production
Surface Mount SOT 3     -55°C 150°C 580mW 12V Tape and Reel NPN 80mA 12V 8GHz 12V 580mW -   1 20V 8GHz 2V             16dB                               Yes     Lead Free Yes Halogen Free  

Farnell - BCR112E6327HTSA1

INFINEON - BCR112E6327HTSA1 - DIGITAL TRANS, 50V, 4.7K/4.7K, SOT-23-3

USD
0.01
End of Life
Surface Mount SOT-23 3   Tin -65°C 150°C 200mW 300mV Tape and Reel NPN 100mA 50V 140MHz 50V 200mW - 3000 1 50V     20 50V 100mA 300mV   300mV                 4.7kR         2.9mm 1.1mm 1.3mm Yes   No Lead Free Yes Not Halogen Free  

Element14 - BC847CE6327HTSA1

INFINEON - BC847CE6327HTSA1 - Bipolar (BJT) Single Transistor, NPN, 45 V, 250 MHz, 330 mW, 100 mA, 110 hFE

USD
0.01
Not Recommended for New Design
Surface Mount SOT-23-3 3     -65°C 150°C 330mW 600mV Tape and Reel NPN 100mA 45V 250MHz 45V 330mW - 3000 1 50V 250MHz 6V   45V 100mA 600mV 250MHz 600mV       Single   100mA               2.9mm 1mm 1.3mm Yes   No Lead Free Yes Not Halogen Free No

Farnell - BFR106E6327HTSA1

INFINEON - BFR106E6327HTSA1 - Bipolar - RF Transistor, NPN, 16 V, 5 GHz, 700 mW, 210 mA, 70 hFE

USD
0.0737
Volume Production
Surface Mount SOT 3   Tin, Matte -55°C 150°C 700mW 15V Tape and Reel NPN 210mA 15V 5GHz 15V 700mW - 1 1 20V 5GHz 3V 70 15V 210mA   5GHz   13dB 1.8dB 13dB                     2.9mm 1mm 1.3mm Yes     Lead Free Yes Not Halogen Free  

Rochester Electronics - BC857BE6327HTSA1

Bipolar (BJT) Transistor PNP 45 V 100 mA 250MHz 330 mW Surface Mount SOT-23-3

USD
0.01
Not Recommended for New Design
Surface Mount SOT-23-3 3   Tin -65°C 150°C 330mW 650mV Tape and Reel PNP 100mA 45V 250MHz 45V 330mW - 3000 1 50V 250MHz 5V 250 -45V -100mA 650mV 250MHz 650mV       Single 250MHz 100mA         200mA 45V   2.9mm 1mm 1.3mm Yes   No Lead Free Yes Not Halogen Free  

Farnell - BFR181WH6327XTSA1

RF TRANSISTOR, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:175mW; DC Collector Current:20mA; DC Current Gain hFE:100; RF Transistor Case:SOT-323; No. of Pins:3; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (17-Dec-2014); Associated Gain Ga:18.5dB; Continuous Collector Current Ic:20mA; Continuous Collector Current Ic Max:20mA; Current Ic Continuous a Max:20mA; Current Ic hFE:5mA; Gain Bandwidth ft Min:6GHz; Gain Bandwidth ft Typ:8GHz; Hfe Min:50; No. of Transistors:1; Noise Figure Typ:1.45dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Packaging:Cut Tape; Power Dissipation Ptot Max:175mW; SMD Marking:RFs; Termination Type:SMD; Test Frequency:900MHz; Transistor Case Style:SOT-323; Voltage Vcbo:20V

USD
0.01
Volume Production
Surface Mount SOT 3     -65°C 150°C 175mW 12V Tape and Reel NPN 20mA 12V 8GHz 12V 175mW - 3000 1 20V 8GHz 2V 50           19dB 0.9dB 19dB       SMD/SMT 900MHz                 Yes   No Lead Free Yes Halogen Free No