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(BJTs)

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Newark - BFP650H6327XTSA1

INFINEON BFP 650 H6327 Bipolar - RF Transistor, NPN, 4.5 V, 42 GHz, 500 mW, 150 mA, 100

USD
0.01
Volume Production
Surface Mount SOT     Tin, Matte -65°C 150°C Tape and Reel 150mA 4V 37GHz 500mW 4.5V 4.5V - 13V NPN 500mW 1.2V 3000 41GHz 1 21.5dB 37GHz             0.8dB 21.5dB Single             2mm 0.9mm 1.25mm Yes     Yes Lead Free Halogen Free  

TME - BFP196WH6327XTSA1

INFINEON - BFP196WH6327XTSA1 - Bipolar - RF Transistor, NPN, 12 V, 7.5 GHz, 700 mW, 150 mA, 70 RoHS Compliant: Yes

USD
0.0912
Volume Production
Surface Mount SOT     Tin, Matte -55°C 150°C Cut Tape 150mA 12V 7.5GHz 700mW 12V 12V - 20V             19dB                                       Yes     Yes Lead Free Halogen Free  

TME - BFP740H6327XTSA1

Very low noise amplifier based on Infineons reliable, high volume SiGe:C technologyOIP3 = 24.5 dBm @ 5.5 GHz, 3 V, 15 mAHigh transition frequency fT = 44 GHz @ 3 V, 25 mANFmin = 0.85 dB @ 5.5 GHz, 3 V, 6 mAMaximum power gain Gms = 19.5 dB @ 5.5 GHz, 3 V, 15 mALow power consumption, ideal for mobile applications, very common in WLAN Wi-Fi applicationsEasy to use Pb-free (RoHS compliant) and halogen-free standard package with visible leadsQualification report according to AEC-Q101 available

USD
0.131
Volume Production
Surface Mount SOT     Tin, Matte -65°C 150°C Tape and Reel 30mA 4V 42GHz 160mW 4.7V 4.7V - 13V NPN 160mW 1.2V 1 42GHz 1 27dB 42GHz                               2mm 0.9mm 1.25mm Yes     Yes Lead Free Halogen Free  

Rochester Electronics - BCR133E6327HTSA1

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 130 MHz 200 mW Surface Mount PG-SOT23

USD
0.01
Not Recommended for New Design
Surface Mount SOT-23 3     -65°C 150°C Tape and Reel 100mA 300mV 130MHz 200mW 50V 50V - 10V NPN 200mW 10V 3000         100mA 50V 30 300mV 300mV 10kR                   2.9mm 0.9mm 1.3mm Yes   No Yes Lead Free Not Halogen Free  

TME - BCX41E6327HTSA1

TRANSISTOR, BIPOL, NPN, 125V, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:125V; Transition Frequency ft:100MHz; Power Dissipation Pd:330mW; DC Collector Current:800mA; DC Current Gain hFE:25hFE;

USD
0.01
End of Life
Surface Mount TO-236-3 3     -65°C 150°C Tape and Reel 800mA 1V 100MHz 330mW 125V 125V - 125V NPN 330mW 5V 3000 100MHz 1   100MHz 800mA 125V 63 900mV 900mV       Single     800mA 8A 125V   2.9mm 0.9mm 1.3mm Yes     Yes Lead Free Not Halogen Free  

TME - BFR181E6327HTSA1

Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:12V; Transition Frequency Ft:8Ghz; Power Dissipation Pd:175Mw; Dc Collector Current:20Ma; Rf Transistor Case:sot-23; No. Of Pins:3Pins; Dc Current Gain Hfe:70Hfe Rohs Compliant: Yes

USD
0.01
Volume Production
Surface Mount SOT 3   Tin, Matte -65°C 150°C Tape and Reel 20mA 12V 8GHz 175mW 12V 12V - 20V NPN 175mW 2V   8GHz 1 18.5dB                                       Yes   No Yes Lead Free Not Halogen Free  

TME - BCR135E6327HTSA1

Switching circuit, inverter, interface circuit driver circuitBuilt in bias resistor (R1=10 k, R2=47 k)BCR135S: Two internally isolated transistors with good matching in one multichip packageBCR135S: For orientation in reel see package information belowPb-free (RoHS compliant) packageQualified according AEC Q101

USD
0.01
End of Life
Surface Mount SOT-23 3   Tin -65°C 150°C Tape and Reel 100mA 300mV 150MHz 200mW 50V 50V - 6V NPN 200mW   3000         100mA 50V 70 300mV 300mV 10kR                   2.9mm 1mm 1.3mm Yes   No Yes Lead Free Not Halogen Free  

Farnell - BFS17PE6327HTSA1

INFINEON - BFS17PE6327HTSA1 - RF TRANSISTOR, NPN, SOT-23

USD
0.01
Not Recommended for New Design
Surface Mount SOT 3     -65°C 150°C Tape and Reel 25mA 15V 1.4GHz 280mW 15V 15V - 25V NPN 280mW 2.5V 3000 2.5MHz 1   2.5MHz 25mA 15V 20 400mV     3.5dB 12.7dB   SMD/SMT 800MHz         2.9mm 1mm 1.3mm Yes   No Yes Lead Free Not Halogen Free No

TME - BFR93AWH6327XTSA1

RF TRANSISTOR, NPN, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:6GHz; Power Dissipation Pd:300mW; DC Collector Current:90mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-323; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Associated Gain Ga:15.5dB; Av Current Ic:50mA; Continuous Collector Current Ic:90mA; Continuous Collector Current Ic Max:30mA; Current Ic @ Gms:30mA; Current Ic Continuous a Max:30mA; Current Ic Fc Measurement:5mA; Current Ic hFE:30mA; Forward Current Transfer Ratio:1:10; Gain Bandwidth ft Min:4.5GHz; Gain Bandwidth ft Typ:6GHz; Gms:15dB; Hfe Min:50; No. of Transistors:1; Noise Figure Typ:1.5dB; Noise Level:2dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:300mW; SMD Marking:R1s; Termination Type:Surface Mount Device; Test Frequency:900MHz; Voltage Vcbo:20V

USD
0.008
Volume Production
Surface Mount SOT     Tin, Matte -65°C 150°C Cut Tape 90mA 12V 6GHz 300mW 12V 12V - 20V             15.5dB                                       Yes     Yes Lead Free Halogen Free  

TME - BFR380FH6327XTSA1

High linearity low noise driver amplifierOutput compression point 19.5 dBm @ 1.8 GHzIdeal for oscillators up to 3.5 GHzLow noise figure 1.1 dB at 1.8 GHzCollector design supports 5 V supply voltagePb-free (RoHS compliant) and halogen-free thin small flat package with visible leadsQualification report according to AEC-Q101 available

USD
0.01
Volume Production
Surface Mount SOT-343-4 3   Tin, Matte -65°C 150°C Tape and Reel 80mA 6V 14GHz 380mW 9V 9V - 15V NPN 380mW 2V 1 14GHz 1 13.5dB 14GHz                               1.2mm 0.55mm 0.8mm Yes   No Yes