SPB80N06S08ATMA1 - Infineon

MOSFET N-CH 55V 80A TO263-3 N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

Technical Details

Case/Package TO-263-3
China RoHS Non-Compliant
Continuous Drain Current (ID) 80A
Current Rating 80A
Drain to Source Breakdown Voltage 55V
Drain to Source Resistance 7.7mΩ
Drain to Source Voltage (Vdss) 55V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 32ns
Gate to Source Voltage (Vgs) 20V
Halogen Free Halogen Free
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Input Capacitance 3.66nF
Introduction Date 2004-11-30
Lead Free Contains Lead
Lifecycle Status Obsolete
Max Dual Supply Voltage 55V
Max Operating Temperature 175°C
Max Power Dissipation 300W
Min Breakdown Voltage 55V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 2
On-State Resistance 8mΩ
Package Quantity 1000
Packaging Tape & Reel
Power Dissipation 300W
Rds On Max 7.7mΩ
REACH SVHC No
Rise Time 53ns
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Turn-Off Delay Time 54ns
Turn-On Delay Time 22ns
Voltage Rating (DC) 55V

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

Images

Infineon SPB80N06S08ATMA1 | Augswan

Augswan

Lifecycle Status Indicator

   Obsolete
Symbol
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