SPI80N06S-08 - Infineon

MOSFET N-CH 55V 80A TO262-3 N-Channel 55 V 80A (Tc) 300W (Tc) Through Hole PG-TO262-3-1

Technical Details

Case/Package TO-262-3
Contact Plating Tin
Continuous Drain Current (ID) 80A
Current Rating 80A
Drain to Source Breakdown Voltage 55V
Drain to Source Resistance 8mΩ
Drain to Source Voltage (Vdss) 55V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 32ns
Gate to Source Voltage (Vgs) 20V
Halogen Free Halogen Free
Input Capacitance 3.66nF
Introduction Date 2004-11-30
Lead Free Contains Lead
Lifecycle Status Obsolete
Max Dual Supply Voltage 55V
Max Operating Temperature 175°C
Max Power Dissipation 300W
Min Breakdown Voltage 55V
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Power Dissipation 300W
Rds On Max 8mΩ
REACH SVHC Yes
Rise Time 53ns
RoHS Compliant
Turn-Off Delay Time 54ns
Voltage Rating (DC) 55V

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

Images

Lifecycle Status Indicator

   Obsolete
Symbol
Footprint

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Infineon Production
STMicroelectronics Obsolete
STMicroelectronics Production
STMicroelectronics Production
Infineon Obsolete
STMicroelectronics Production
STMicroelectronics Production
STMicroelectronics Obsolete
Infineon Obsolete
Infineon Production

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