SPP11N60S5HKSA1 - Infineon

MOSFET N-CH 650V 11A TO220-3 N-Channel 650 V 11A (Tc) 125W (Tc) Through Hole PG-TO220-3-1

Technical Details

Case/Package TO-220-3
China RoHS Compliant
Continuous Drain Current (ID) 11A
Drain to Source Resistance 380mΩ
Drain to Source Voltage (Vdss) 650V
Export Control Classification Number (ECCN) Code EAR99
Fall Time 20ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.46nF
Introduction Date 1999-04-13
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 125W
Min Breakdown Voltage 600V
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Terminals 3
Power Dissipation 125W
Rds On Max 380mΩ
REACH SVHC Yes
Rise Time 35ns
RoHS Compliant
Turn-Off Delay Time 150ns
Turn-On Delay Time 130ns

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

Images

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

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