Uncategorized
2N4856A - InterFET
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18
Technical Details
| Body Material | Metal |
| Drain to Source Resistance | 25Ω |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 360mW |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 1.8W |
| REACH SVHC | Yes |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Central Semiconductor | Production | ||
| STMicroelectronics | Obsolete | ||
| InterFET | Unknown | ||
| Microchip | Production | ||
| InterFET | Unknown | ||
| InterFET | Unknown | ||
| InterFET | Unknown | ||
| Texas Instruments | Unknown | ||
| InterFET | Unknown | ||
| Texas Instruments | Obsolete |
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