Discrete Semiconductors > Transistors > BJTs

MJ15024G - onsemi

Transistor, Bipolar, Si, NPN, Power, Vceo 250VDC, IC 16A, Pd 250W, TO-204AA (TO-3)

Technical Details

Body Material	Metal
Case/Package	TO-204-3
China RoHS	Non-Compliant
Collector Base Voltage (VCBO)	400V
Collector Emitter Breakdown Voltage	250V
Collector Emitter Saturation Voltage	1.4V
Collector Emitter Voltage (VCEO)	250V
Country of Origin	Mexico
Current Rating	16A
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Emitter Base Voltage (VEBO)	5V
Frequency	4MHz
Gain Bandwidth Product	4MHz
Height	8.51mm
hFE Min	5
Introduction Date	1991-06-01
Lead Free	Lead Free
Length	39.37mm
Lifecycle Status	Production
Manufacturer Lifecycle Status	ACTIVE
Max Collector Current	16A
Max Frequency	4MHz
Max Operating Temperature	200°C
Max Power Dissipation	250W
Min Operating Temperature	-65°C
Number of Elements	1
Number of Pins	2
Number of Terminals	2
Polarity	NPN
Power Dissipation	250W
Radiation Hardening	No
REACH SVHC	No
RoHS	Compliant
Schedule B	8541290080
Transition Frequency	4MHz
Voltage Rating (DC)	250V
Weight	4.535924g
Width	26.67mm

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Images

onsemi MJ15024G | Future Electronics

Future Electronics

Datasheets

Lifecycle Status Indicator

Production

Symbol

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Footprint

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Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
onsemi	MJ15024	Obsolete
Multicomp	MJ15024	Production
Toshiba	BU205	Obsolete
STMicroelectronics	BUR51	Obsolete
STMicroelectronics	BUR52	Obsolete
onsemi	2N5886	Obsolete
STMicroelectronics	BU208A	Obsolete
STMicroelectronics	2N6675	Obsolete
onsemi	2N6341	Obsolete
STMicroelectronics	BUX41	Obsolete

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