Discrete Semiconductors > Transistors > BJTs

MJ802G - onsemi

Transistor, Bipolar, Si, NPN, High Power, Vceo 100VDC, IC 30A, Pd 200W, Vcbo 100VDC

Technical Details

Body Material	Metal
Case/Package	TO-3
China RoHS	Non-Compliant
Collector Base Voltage (VCBO)	100V
Collector Emitter Breakdown Voltage	90V
Collector Emitter Saturation Voltage	800mV
Collector Emitter Voltage (VCEO)	90V
Country of Origin	Mexico
Current Rating	30A
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Emitter Base Voltage (VEBO)	4V
Frequency	2MHz
Gain Bandwidth Product	2MHz
Height	8.51mm
hFE Min	25
Introduction Date	1991-06-01
Lead Free	Lead Free
Length	39.37mm
Lifecycle Status	Production
Manufacturer Lifecycle Status	ACTIVE
Max Collector Current	30A
Max Frequency	2MHz
Max Operating Temperature	200°C
Max Power Dissipation	200W
Min Operating Temperature	-65°C
Number of Elements	1
Number of Pins	2
Number of Terminals	2
Polarity	NPN
Power Dissipation	200W
Radiation Hardening	No
REACH SVHC	No
RoHS	Compliant
Transition Frequency	2MHz
Voltage Rating (DC)	90V
Weight	4.535924g
Width	26.67mm

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Images

onsemi MJ802G | RS

RS

Datasheets

Lifecycle Status Indicator

Production

Symbol

MJ802G Symbol - onsemi

MJ802G Symbol - onsemi

MJ802G Symbol - onsemi

MJ802G Symbol - onsemi

‹ ›

Footprint

MJ802G Footprint - onsemi

MJ802G Footprint - onsemi

MJ802G Footprint - onsemi

MJ802G Footprint - onsemi

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Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
STMicroelectronics	MJ802	Obsolete
onsemi	MJ802	Obsolete
Toshiba	BU205	Obsolete
STMicroelectronics	BUR51	Obsolete
STMicroelectronics	BUR52	Obsolete
onsemi	2N5886	Obsolete
STMicroelectronics	BU208A	Obsolete
STMicroelectronics	2N6675	Obsolete
onsemi	2N6341	Obsolete
STMicroelectronics	BUX41	Obsolete

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SKU

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USD

1

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RS

DE: 206

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5.164

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23.8106

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