SIHFU9210-GE3 - Vishay
Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,...
Technical Details
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Resistance | 3Ω |
| Lifecycle Status | Production |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 25W |
| Min Breakdown Voltage | 200V |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| REACH SVHC | Yes |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Vishay | Production | ||
| Vishay | Obsolete | ||
| Vishay | Production | ||
| Fairchild Semiconductor | Obsolete | ||
| Toshiba | EOL | ||
| Toshiba | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| onsemi | Obsolete |
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