BCR158E6327HTSA1 - Infineon
BRT TRANS, 2.2K/47KOHM, SOT-23; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.047(Ratio); RF Transistor RoHS Compliant: Yes
| x1 | $0.01 |
| x100 | $0.009 |
BFP640ESDH6327XTSA1 - Infineon
Infineon BFP640ESDH6327 NPN SiGe Bipolar Transistor, 0.05 A, 4.1 V, 4-Pin SOT-343
| x1 | $0.01 |
| x100 | $0.01 |
BC817K25E6327HTSA1 - Infineon
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 500 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 250 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 170 / Power Dissipation (Pd) mW = 500 / Package Type = SOT-23 / Pins = 3 / Mounting Type = Surface Mount / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 700 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.2
| x1 | $0.01 |
| x100 | $0.01 |
BC846ALT1G - ON Semiconductor
ON SEMICONDUCTOR - BC846ALT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 65 V, 100 MHz, 300 mW, 100 mA, 100 hFE
| x1 | $0.008 |
| x100 | $0.007 |
BF771E6327HTSA1 - Infineon
Rf Transistor, Npn, 12V, 8Ghz, Sot-23; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:12V; Transition Frequency Ft:8Ghz; Power Dissipation Pd:580Mw; Dc Collector Current:80Ma; Dc Current Gain Hfe:70Hfe; Rf Transistor Rohs Compliant: Yes
| x1 | $0.01 |
| x100 | $0.01 |
BC846SH6327XTSA1 - Infineon
TRANS, NPN, DUAL, 65V, SOT-363; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes
| x1 | $0.01 |
| x100 | $0.01 |
BC847BLT1G - ON Semiconductor
ON SEMICONDUCTOR - BC847BLT1G - Transistor de Unión Bipolar Único, Propósito General, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 450 hFE
| x1 | $0.01 |
| x100 | $0.007 |
BC817-16LT1G - ON Semiconductor
ON SEMICONDUCTOR - BC817-16LT1G - Transistor simple bipolaire (BJT), À usage général, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 100 hFE
| x1 | $0.0046 |
| x100 | $0.0033 |
MMBT3906-7-F - Diodes Zetex
DIODES INC. - MMBT3906-7-F - Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 300 mW, -200 mA, 100 hFE
| x1 | $0.012 |
| x100 | $0.007 |
BCR108SH6327XTSA1 - Infineon
Infineon, BCR 108S, Dual NPN Digital Transistor, 100 mA 50 V 2.2 k, Ratio Of 0.047, 6-Pin SOT-363
| x1 | $0.08 |
| x100 | $0.0561 |
