BCR183E6327HTSA1 - Infineon
Bipolar junction transistor, PNP, 100 mA, 50 ## Fehler ##, SMD, SOT-23, BCR183E6327
| x1 | $0.01 |
| x100 | $0.01 |
BC847BWH6327XTSA1 - Infineon
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin SOT-323 T/R
| x1 | $0.01 |
| x100 | $0.01 |
BFP193WH6327XTSA1 - Infineon
RF TRANSISTOR, NPN, SOT-343; Transistor Type:RF Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:12V; Continuous Collector Current Ic:80mA; ft, Typ:8GHz; Case Style:SOT-343; Power Dissipation Pd:580mW; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Associated Gain Ga:20.5dB; Noise:1dB; Test Frequency:900MHz; Transistors, No. of:1; ft, Min:6000MHz; Current Ic @ Gms:30mA; Current Ic Continuous a Max:0.05A; Current Ic Fc Measurement:10mA; Current Ic Max:0.05A; Current Ic av:80mA; Current Ic hFE:30mA; Gms:13dB; Min Hfe:50; Noise Level, Fc @ Ic:2.1dB; Power, Ptot:580mW; SMD Marking:RCs; Voltage, Vcbo:20V
| x1 | $0.01 |
| x100 | $0.01 |
MMBTA56LT1G - ON Semiconductor
ON SEMICONDUCTOR - MMBTA56LT1G - Bipolar (BJT) Single Transistor, General Purpose, PNP, -80 V, 50 MHz, 225 mW, -500 mA, 100 hFE
| x1 | $0.015 |
| x100 | $0.0085 |
BCV61CE6327HTSA1 - Infineon
Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR
| x1 | $0.216 |
| x100 | $0.0437 |
BFP540H6327XTSA1 - Infineon
RF TRANSISTOR, SOT-343; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.5V; Transition Frequency ft:1.8GHz; Power Dissipation Pd:250mW; DC Collector Current:80mA; DC Current Gain hFE:110hFE; RF Transistor Case:SOT-343; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Associated Gain Ga:21.5dB; Continuous Collector Current Ic:80mA; Continuous Collector Current Ic Max:80mA; Current Ic Continuous a Max:80mA; Current Ic hFE:50mA; Gain Bandwidth ft Min:1.8GHz; Gain Bandwidth ft Typ:1.8GHz; Hfe Min:50; No. of Transistors:1; Noise Figure Typ:0.9dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Output @ Third Order Intercept Point IP3:24.5dB; Power @ 1dB Gain Compression, P1dB:11dB; Power Dissipation Ptot Max:250mW; SMD Marking:ATs; Termination Type:Surface Mount Device; Test Frequency:1.8GHz; Transistor Case Style:SOT-343; Voltage Vcbo:14V
| x1 | $0.01 |
| x100 | $0.01 |
BCR191E6327HTSA1 - Infineon
Infineon, BCR191E6327 PNP Digital Transistor, 100 mA 50 V 22 k, Ratio Of 1, 3-Pin SOT-23
| x1 | $0.01 |
| x100 | $0.01 |
MMBT4403LT1G - ON Semiconductor
Transistor: PNP; bipolar; -40V; -0.6A; 225mW; -55+150 deg.C; SMD; SOT23
| x1 | $0.007 |
| x100 | $0.0061 |
BFP183E7764HTSA1 - Infineon
Infineon BFP183E7764 NPN RF Bipolar Transistor, 0.065 A, 12 V, 4-Pin SOT-143
| x1 | $0.083 |
| x100 | $0.0373 |
BCP56-16T1G - ON Semiconductor
ON SEMICONDUCTOR - BCP56-16T1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 100 RoHS Compliant: Yes
| x1 | $0.08 |
| x100 | $0.0457 |
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