BC846BLT1G - ON Semiconductor
ON SEMICONDUCTOR - BC846BLT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 65 V, 100 MHz, 300 mW, 100 mA, 200 RoHS Compliant: Yes
| x1 | $0.0068 |
| x100 | $0.0061 |
PZT2907AT1G - ON Semiconductor
ON SEMICONDUCTOR PZT2907AT1G Bipolar (BJT) Single Transistor, General Purpose, PNP, 60 V, 200 MHz, 1.5 W, -600 mA, 200
| x1 | $0.0416 |
| x100 | $0.0416 |
BCV62AE6327HTSA1 - Infineon
TRANS, PNP, DUAL, -30V, SOT143; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-30V; Power Dissipation Pd:300mW; DC Collector Current:-100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-143; N
| x1 | $0.01 |
| x100 | $0.01 |
BC858CE6327HTSA1 - Infineon
BC858 Series PNP 30 V 100 mA Silicon AF Transistor Array - SOT-23-3
| x1 | $0.01 |
| x100 | $0.0098 |
BFQ19SH6327XTSA1 - Infineon
BFQ19S Series NPN 1 W 15 V 120 mA Low Noise Bipolar RF Transistor - SOT-89
| x1 | $0.01 |
| x100 | $0.01 |
BFR740L3RHE6327XTSA1 - Infineon
Very low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at 5.5 GHz, 3 V, 6 mAHigh power gain Gms = 20 dB at 5.5 GHz, 15 mA, 3 VVery thin small leadless package (height only 0.31 mm), hence ideal for modules with compact size and low profile heightPb-free (RoHS compliant) and halogen-free packageQualification report according to AEC-Q101 available
| x1 | $0.01 |
| x100 | $0.01 |
BCR133SH6327XTSA1 - Infineon
BRT TRANS, 1K/10KOHM, SOT-363; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor RoHS Compliant: Yes
| x1 | $0.01 |
| x100 | $0.01 |
BC847SH6327XTSA1 - Infineon
TRANSISTOR, DUAL NPN, 45V, 200MA, SC70-6; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:200MHz; Power Dissipation Pd:300mW; DC Collector Current:200mA; DC Current Gain hFE:110; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SC-70; No. of Pins:6; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)
| x1 | $0.01 |
| x100 | $0.01 |
BFR182WH6327XTSA1 - Infineon
RF TRANSISTOR, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:250mW; DC Collector Current:35mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-323; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (27-Jun-2018); Associated Gain Ga:19dB; Continuous Collector Current Ic:35mA; Continuous Collector Current Ic Max:35mA; Current Ic Continuous a Max:35mA; Current Ic hFE:10mA; Gain Bandwidth ft Min:6GHz; Gain Bandwidth ft Typ:8GHz; Hfe Min:50; No. of Transistors:1; Noise Figure Typ:1.2dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:250mW; SMD Marking:RGs; Termination Type:Surface Mount Device; Test Frequency:900MHz; Transistor Case Style:SOT-323; Voltage Vcbo:20V
| x1 | $0.01 |
| x100 | $0.01 |
BC848CE6327HTSA1 - Infineon
Bipolar junction transistor, NPN, 100 mA, 30 ## Fehler ##, SMD, SOT-23, BC848CE6327HTSA1
| x1 | $0.01 |
| x100 | $0.006 |
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