BCP69T1G - ON Semiconductor
ON SEMICONDUCTOR - BCP69T1G - Bipolar (BJT) Single Transistor, General Purpose, PNP, -20 V, 60 MHz, 1.5 W, -1 A, 375 hFE
| x1 | $0.044 |
| x100 | $0.0385 |
BCX70KE6327HTSA1 - Infineon
Transistor, Bipol, Npn, 45V, Sot-23-3; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:45V; Transition Frequency Ft:250Mhz; Power Dissipation Pd:330Mw; Dc Collector Current:100Ma; Dc Current Gain Hfe:100Hfe; Transistor Rohs Compliant: Yes
| x1 | $0.01 |
| x100 | $0.01 |
BCV62CE6327HTSA1 - Infineon
INFINEON - BCV62CE6327HTSA1 - Bipolar (BJT) Array Transistor, PNP, 30 V, 300 mW, 100 mA, 520, SOT-143 RoHS Compliant: Yes
| x1 | $0.01 |
| x100 | $0.01 |
BFP620H7764XTSA1 - Infineon
RF TRANSISTOR, SOT-343; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.3V; Transition Frequency ft:65GHz; Power Dissipation Pd:185mW; DC Collector Current:80mA; DC Current Gain hFE:180hFE; RF Transistor Case:SOT-343; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Associated Gain Ga:21.5dB; Continuous Collector Current Ic:80mA; Continuous Collector Current Ic Max:80mA; Current Ic Continuous a Max:80mA; Current Ic hFE:50mA; Gain Bandwidth ft Typ:65GHz; Hfe Min:110; No. of Transistors:1; Noise Figure Typ:0.7dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Output @ Third Order Intercept Point IP3:25dB; Power @ 1dB Gain Compression, P1dB:15dBm; Power Dissipation Ptot Max:185mW; SMD Marking:R2s; Termination Type:Surface Mount Device; Test Frequency:1.8GHz; Transistor Case Style:SOT-343; Voltage Vcbo:7.5V
| x1 | $0.2479 |
| x100 | $0.1332 |
BFP193E6327HTSA1 - Infineon
RF TRANSISTOR, NPN, 12V, 8GHZ, SOT-143; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:580mW; DC Collector Current:80mA; DC Current Gain hFE:70; RF Transistor Case:SOT-143; No. of Pins:4; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited
| x1 | $0.0979 |
| x100 | $0.0131 |
ULN2003D1013TR - STMicroelectronics
ULN Series 50V 500 mA High Voltage High Current Seven Darlington Array - SOIC-16
| x1 | $0.1027 |
| x100 | $0.0041 |
MMBT4401LT1G - ON Semiconductor
ON SEMICONDUCTOR - MMBT4401LT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 250 MHz, 225 mW, 600 mA, 250 RoHS Compliant: Yes
| x1 | $0.0111 |
| x100 | $0.0067 |
MMBT5551LT1G - ON Semiconductor
ON SEMICONDUCTOR MMBT5551LT1G Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 225 mW, 600 mA, 80 hFE
| x1 | $0.012 |
| x100 | $0.0099 |
BFP540ESDH6327XTSA1 - Infineon
NPN Silicon RF Transistor for ESD protected high gain low noise amplifier, SOT343, RoHS
| x1 | $0.01 |
| x100 | $0.01 |
BC846BLT1G - ON Semiconductor
ON SEMICONDUCTOR BC846BLT1G Bipolar (BJT) Single Transistor, General Purpose, NPN, 65 V, 100 MHz, 300 mW, 100 mA, 200
| x1 | $0.0068 |
| x100 | $0.0061 |
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