BCR08PNH6327XTSA1 - Infineon
Infineon, BCR08PNH6327, Dual NPN+PNP Digital Transistor, 100 mA 50 V 2.2 k, Ratio Of 0.047, 6-Pin SOT-363
| x1 | $0.01 |
| x100 | $0.01 |
MMBTA42LT1G - ON Semiconductor
Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 225 mW Surface Mount SOT-23-3 (TO-236)
| x1 | $0.016 |
| x100 | $0.0131 |
SMBT2907AE6327HTSA1 - Infineon
Bipolar junction transistor, PNP, 600 mA, 60 ## Fehler ##, SMD, SOT-23, SMBT2907AE6327
| x1 | $0.01 |
| x100 | $0.01 |
BFR340FH6327XTSA1 - Infineon
INFINEON - BFR340FH6327XTSA1 - Bipolar - RF Transistor, NPN, 6 V, 14 GHz, 75 mW, 20 mA, 90 hFE
| x1 | $0.01 |
| x100 | $0.01 |
BFP650FH6327XTSA1 - Infineon
Bipolar - RF Transistor, NPN, 4 V, 42 GHz, 500 mW, 150 mA, 110 ;RoHS Compliant: Yes
| x1 | $0.01 |
| x100 | $0.01 |
BCR503E6327HTSA1 - Infineon
BCR503 Series NPN 50 V 500 mA SMT Silicon Digital Transistor - SOT-23-3
| x1 | $0.01 |
| x100 | $0.01 |
MMBT5401LT1G - ON Semiconductor
ON SEMICONDUCTOR - MMBT5401LT1G - Bipolar (BJT) Single Transistor, General Purpose, PNP, -150 V, 300 MHz, 225 mW, -500 mA, 100 RoHS Compliant: Yes
| x1 | $0.015 |
| x100 | $0.0131 |
BFR35APE6327HTSA1 - Infineon
Rf Transistor, Npn, 15V, 5Ghz, Sot-23; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:15V; Transition Frequency Ft:5Ghz; Power Dissipation Pd:280Mw; Dc Collector Current:45Ma; Dc Current Gain Hfe:70Hfe; Rf Transistor Rohs Compliant: Yes
| x1 | $0.01 |
| x100 | $0.01 |
BCX42E6327HTSA1 - Infineon
Infineon BCX42E6327 PNP Bipolar Transistor, 0.8 A, 125 V, 3-Pin SOT-23
| x1 | $0.01 |
| x100 | $0.01 |
BCR158E6327HTSA1 - Infineon
BRT TRANS, 2.2K/47KOHM, SOT-23; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.047(Ratio); RF Transistor RoHS Compliant: Yes
| x1 | $0.01 |
| x100 | $0.009 |
