STP18N55M5 - STMicroelectronics

N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in TO-220 package

Technical Details

Case/Package TO-220
China RoHS Non-Compliant
Continuous Drain Current (ID) 13A
Country of Origin Mainland China
Drain to Source Breakdown Voltage 550V
Drain to Source Resistance 240mΩ
Drain to Source Voltage (Vdss) 550V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 13ns
Gate to Source Voltage (Vgs) 25V
Height 15.75mm
Input Capacitance 1.352nF
Introduction Date 2010-02-09
Lead Free Lead Free
Length 10.4mm
Lifecycle Status Production
Max Operating Temperature 150°C
Max Power Dissipation 90W
Min Breakdown Voltage 550V
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Power Dissipation 90W
Radiation Hardening No
Rds On Max 192mΩ
REACH SVHC No
Resistance 240MΩ
Rise Time 9.5ns
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Threshold Voltage 4V
Turn-Off Delay Time 29ns
Width 4.6mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

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STMicroelectronics STP18N55M5 | RS

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Lifecycle Status Indicator

   Production

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