SMBT3906E6327HTSA1 - Infineon
Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 330 mW Surface Mount SOT-23-3
| x1 | $0.016 |
| x100 | $0.016 |
BFR360FH6327XTSA1 - Infineon
Low noise amplifier for low current applicationsCollector design supports 5 V supply voltageFor oscillators up to 3.5 GHzLow noise figure 1.0 dB at 1.8 GHzPb-free (RoHS compliant) and halogen-free thin small flat package with visible leadsQualification report according to AEC-Q101 available
| x1 | $0.01 |
| x100 | $0.01 |
BCR512E6327HTSA1 - Infineon
Digital Trans, 50V, 4.7K/4.7K, Sot-23-3; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:500Ma; Base Input Resistor R1:4.7Kohm; Base-Emitter Resistor R2:4.7Kohm; Rohs Compliant: Yes
| x1 | $0.01 |
| x100 | $0.0083 |
BCV47E6327HTSA1 - Infineon
TRANSISTOR, BIPOLAR, NPN, 60V, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:170MHz; Power Dissipation Pd:360mW; DC Collector Current:500mA; DC Current Gain hFE:2000hFE; TransistorRoHS Compliant: Yes
| x1 | $0.01 |
| x100 | $0.01 |
MMBT2907ALT1G - ON Semiconductor
Transistor, Bipolar, Si, PNP, General Purpose, VCEO -60VDC, IC -600mA, PD 225mW, hFE 50
| x1 | $0.009 |
| x100 | $0.0087 |
BCR108E6327HTSA1 - Infineon
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / DC Current Gain (hFE) = 70 / Power Dissipation (Pd) mW = 200 / Typical Input Resistor kOhm = 2.2 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Operating Temperature Max. °C = 150 / Operating Temperature Min. °C = -65 / Package Type = SOT-23 / Pins = 3 / Mounting Type = Surface Mount / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Operating Frequency MHz = 170
| x1 | $0.01 |
| x100 | $0.01 |
SMBT3904E6327HTSA1 - Infineon
INFINEON - SMBT3904E6327HTSA1 - Bipolar (BJT) Single Transistor, NPN, 40 V, 270 MHz, 330 mW, 200 mA, 100 hFE
| x1 | $0.0283 |
| x100 | $0.0175 |
MMBTA06LT1G - ON Semiconductor
ON SEMICONDUCTOR - MMBTA06LT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 100 MHz, 300 mW, 500 mA, 100 hFE
| x1 | $0.009 |
| x100 | $0.0059 |
BFP520H6327XTSA1 - Infineon
Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports Vcc = 2.9 V with enough external collector resistance.High gain and low noise at high frequencies due to high transit frequency fT = 45 GHzCommon e.g. in cordless phones and satellite receiversEasy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leadsQualification report according to AEC-Q101 available
| x1 | $0.01 |
| x100 | $0.01 |
BCR22PNH6327XTSA1 - Infineon
BRT TRANS, 22K/22KOHM, SOT-363; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor RoHS Compliant: Yes
| x1 | $0.01 |
| x100 | $0.01 |
