BFP650H6327XTSA1 - Infineon
INFINEON BFP 650 H6327 Bipolar - RF Transistor, NPN, 4.5 V, 42 GHz, 500 mW, 150 mA, 100
| x1 | $0.01 |
| x100 | $0.01 |
BFP196WH6327XTSA1 - Infineon
INFINEON - BFP196WH6327XTSA1 - Bipolar - RF Transistor, NPN, 12 V, 7.5 GHz, 700 mW, 150 mA, 70 RoHS Compliant: Yes
| x1 | $0.0912 |
| x100 | $0.0044 |
BFP740H6327XTSA1 - Infineon
Very low noise amplifier based on Infineons reliable, high volume SiGe:C technologyOIP3 = 24.5 dBm @ 5.5 GHz, 3 V, 15 mAHigh transition frequency fT = 44 GHz @ 3 V, 25 mANFmin = 0.85 dB @ 5.5 GHz, 3 V, 6 mAMaximum power gain Gms = 19.5 dB @ 5.5 GHz, 3 V, 15 mALow power consumption, ideal for mobile applications, very common in WLAN Wi-Fi applicationsEasy to use Pb-free (RoHS compliant) and halogen-free standard package with visible leadsQualification report according to AEC-Q101 available
| x1 | $0.131 |
| x100 | $0.0874 |
BCR133E6327HTSA1 - Infineon
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 130 MHz 200 mW Surface Mount PG-SOT23
| x1 | $0.01 |
| x100 | $0.01 |
BFR181E6327HTSA1 - Infineon
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:12V; Transition Frequency Ft:8Ghz; Power Dissipation Pd:175Mw; Dc Collector Current:20Ma; Rf Transistor Case:sot-23; No. Of Pins:3Pins; Dc Current Gain Hfe:70Hfe Rohs Compliant: Yes
| x1 | $0.01 |
| x100 | $0.01 |
BCX41E6327HTSA1 - Infineon
TRANSISTOR, BIPOL, NPN, 125V, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:125V; Transition Frequency ft:100MHz; Power Dissipation Pd:330mW; DC Collector Current:800mA; DC Current Gain hFE:25hFE;
| x1 | $0.01 |
| x100 | $0.01 |
BCR135E6327HTSA1 - Infineon
Switching circuit, inverter, interface circuit driver circuitBuilt in bias resistor (R1=10 k, R2=47 k)BCR135S: Two internally isolated transistors with good matching in one multichip packageBCR135S: For orientation in reel see package information belowPb-free (RoHS compliant) packageQualified according AEC Q101
| x1 | $0.01 |
| x100 | $0.0087 |
BFS17PE6327HTSA1 - Infineon
Infineon BFS17PE6327 NPN RF Bipolar Transistor, 0.025 A, 15 V, 3-Pin SOT-23
| x1 | $0.01 |
| x100 | $0.01 |
BFR93AWH6327XTSA1 - Infineon
RF TRANSISTOR, NPN, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:6GHz; Power Dissipation Pd:300mW; DC Collector Current:90mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-323; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Associated Gain Ga:15.5dB; Av Current Ic:50mA; Continuous Collector Current Ic:90mA; Continuous Collector Current Ic Max:30mA; Current Ic @ Gms:30mA; Current Ic Continuous a Max:30mA; Current Ic Fc Measurement:5mA; Current Ic hFE:30mA; Forward Current Transfer Ratio:1:10; Gain Bandwidth ft Min:4.5GHz; Gain Bandwidth ft Typ:6GHz; Gms:15dB; Hfe Min:50; No. of Transistors:1; Noise Figure Typ:1.5dB; Noise Level:2dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:300mW; SMD Marking:R1s; Termination Type:Surface Mount Device; Test Frequency:900MHz; Voltage Vcbo:20V
| x1 | $0.008 |
| x100 | $0.01 |
BFR380FH6327XTSA1 - Infineon
High linearity low noise driver amplifierOutput compression point 19.5 dBm @ 1.8 GHzIdeal for oscillators up to 3.5 GHzLow noise figure 1.1 dB at 1.8 GHzCollector design supports 5 V supply voltagePb-free (RoHS compliant) and halogen-free thin small flat package with visible leadsQualification report according to AEC-Q101 available
| x1 | $0.01 |
| x100 | $0.01 |
