BFR193E6327HTSA1 - Infineon
For low noise, high-gain amplifiers up to 2 GHzFor linear broadband amplifiersfT = 8 GHz, NFmin = 1 dB at 900 MHzPb-free (RoHS compliant) packageQualification report according to AEC-Q101 available
| x1 | $0.01 |
| x100 | $0.01 |
MMBT2222ALT1G - ON Semiconductor
Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 225mW Surface Mount SOT-23-3
| x1 | $0.009 |
| x100 | $0.007 |
BFP405H6327XTSA1 - Infineon
Trans RF BJT NPN 4.5V 0.025A Automotive 4-Pin(3+Tab) SOT-343 T/R
| x1 | $0.01 |
| x100 | $0.01 |
BCR10PNH6327XTSA1 - Infineon
BCR10PN Series NPN/PNP 50 V 100 mA Silicon Digital Transistor Array - SOT-363-6
| x1 | $0.11 |
| x100 | $0.0087 |
BFR193WH6327XTSA1 - Infineon
Rf Transistor, Npn, 12V, 8Ghz, Sot-323; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:12V; Transition Frequency Ft:8Ghz; Power Dissipation Pd:580Mw; Dc Collector Current:80Ma; Dc Current Gain Hfe:70Hfe; Rf Transistor Rohs Compliant: Yes
| x1 | $0.08 |
| x100 | $0.0147 |
BCR112E6327HTSA1 - Infineon
Switching circuit, inverter, interface circuit, driver circuitBuilt in bias resistor (R1=4.7k, R2=4.7k)Pb-free (RoHS compliant) packageQualified according AEC Q101
| x1 | $0.01 |
| x100 | $0.01 |
BC847CE6327HTSA1 - Infineon
INFINEON - BC847CE6327HTSA1 - Bipolar (BJT) Single Transistor, NPN, 45 V, 250 MHz, 330 mW, 100 mA, 110 hFE
| x1 | $0.01 |
| x100 | $0.01 |
BFR106E6327HTSA1 - Infineon
INFINEON - BFR106E6327HTSA1 - Bipolar - RF Transistor, NPN, 16 V, 5 GHz, 700 mW, 210 mA, 70 hFE
| x1 | $0.0737 |
| x100 | $0.0024 |
BC857BE6327HTSA1 - Infineon
Bipolar (BJT) Transistor PNP 45 V 100 mA 250MHz 330 mW Surface Mount SOT-23-3
| x1 | $0.01 |
| x100 | $0.01 |
BFR181WH6327XTSA1 - Infineon
RF TRANSISTOR, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:175mW; DC Collector Current:20mA; DC Current Gain hFE:100; RF Transistor Case:SOT-323; No. of Pins:3; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (17-Dec-2014); Associated Gain Ga:18.5dB; Continuous Collector Current Ic:20mA; Continuous Collector Current Ic Max:20mA; Current Ic Continuous a Max:20mA; Current Ic hFE:5mA; Gain Bandwidth ft Min:6GHz; Gain Bandwidth ft Typ:8GHz; Hfe Min:50; No. of Transistors:1; Noise Figure Typ:1.45dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Packaging:Cut Tape; Power Dissipation Ptot Max:175mW; SMD Marking:RFs; Termination Type:SMD; Test Frequency:900MHz; Transistor Case Style:SOT-323; Voltage Vcbo:20V
| x1 | $0.01 |
| x100 | $0.01 |
